A field-effect transistor installation in H-waveguide amplifiers

Authors

DOI:

https://doi.org/10.1109/ICATT.1997.1235222

Abstract

This article touches upon the problem of practical tealization of microwave low-noise transistor amplifiers. A problem of the amplifier oscillating outside of operating frequency range is considered. A way of microwave chip transistor installation for elimination of this effect is investigated.

References

Chenakin, A.V.; Skachko, V.I. Waveguide transistor amplifiers. Proc. 5th Int. Symp. on Recent Advances in Microwave Technology, Sept. 1995, Kiev, Ukraine. Kiev, 1995, Vol. 1, p. 337-340.

Chenakin, A.V.; Skachko, V.I. Millimeter wave super low noise transistor amplifier. Proc. 1995 Asia-Pacific Microwave Conf., Oct. 1995, Taejon, Korea. 1995, Vol. 1, p. 25-27.

Chenakin, A.V. Waveguide planar low-noise transistor amplifier for millimeter-wave frequency range, Ph D. Dissertation, Kiev, 1996.

Di Lorenzo, J.V.; Khandelwal, D.D. GaAs FET. Principles and Technology. Moscow: Radio and Communication, 1988.

1997 cover of Proc.

Published

1997-05-24

Issue

1997: ICATT’97 - Proc. of II Int. Conf. on Antenna Theory and Techniques

Section

Microwave components and circuits, fiber-optic links